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26 (SCIE)Keunbin Yim, Hyounwoo Kim, Chongmu Lee,"Effects of the O2/Ar gas flow ratio on the electrical and tansmittance properties of ZnO:Al films deposited by RFR magnetron sputtering", Journal of Electroceramics 17 (2006.12) 875-877.
25 (SCIE)Hyoun Woo Kim*, Seung Hyun Shim,"Synthesis and characteristics of SnO2 needle-shaped nanostructures", Journal of Alloys and Compounds 426 (2006.12.21) 286-289.
24 (SCIE)Hyoun Woo Kim*, Seung Hyun Shim,"Study of ZnO-coated SnO2 nanostructures synthesized by a two-step process", Applied Surface Science 253 (2006.11.15) 510-514.
23 (SCIE)Sookjoo Kim, Jinho Jeon, Hyoun Woo Kim, Jinho Guo Lee, Chongmu Lee*, "Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga-doped ZnO thin films prepared by rf magnetron sputtering", Crystal Research and Technology 41 (2006.12) 1194-1197.
22 (SCIE)Hyoun Woo Kim*, Seung Hyun Shim,"SnO2 microparticles by thermal evaporation and their properties", Ceramic International 32 (2006.12) 943-946.
21 (SCIE)H. W. Kim*, J. H. Myung, S. H. Shim, W. S. Hwang,"Characteristics of indium oxide rod-like structures synthesized on sapphire substrates", Materials Science Forum (2006) 143-148.
20 (SCIE)H. W. Kim*, S. H. Shim, C. Lee,"Annealing effects on GaN/ZnO/Si structures prepared by RF magnetron sputtering", Materials Science Forum (2006) 137-142.
19 (SCIE)Hyoun Woo Kim*, Ju Hyun Myung, Jong Woo Lee, Hyung-Sun Kim, Keeho Kim, Jeong-Yeol Jang, Tae-Ho Yoon, Sung Kyeong Kim, Dae-Kyu Choi, Chin-Wook Chung, Geun Young Yeom, Jae-Min Myoung, Hyoung-June Kim,"Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process", Journal of Materials Science 41 (2006.08) 5040-5042.
18 (SCIE)Hyoun Woo Kim*, Jong Woo Lee, Chongmu Lee,"Production of Bi2O3 nanorods via a catalyst-free approach", Journal of the Korean Physical Society 49 (2006.08.15) 632-636.
17 (SCIE)Hyoun Woo Kim*, Seung Hyun Shim, Chongmu Lee,"Temperature-controlled synthesis of MgO nanorods", Journal of the Korean Physical Society 49 (2006.08.15) 628-631.