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0 8 (SCIE) Hyoun-woo Kim, Byong-Sun Ju, Byeong-Yun Nam, Won-Jong Yoo, Chang-Jin Kang, Tae-Hyuk Ahn, Joo-Tae Moon, Moon-Yong Lee, High temperature platinum etching using Ti mask layer, Journal of Vacuum Science & Technology A 17 (1999.07.08) 2151-2155.
0 7 (SCIE) Hyoun-woo Kim*, Rafael Reif, Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy, Thin Solid Films 305 (1997.08) 280-285.
0 6 (SCIE) Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178.
0 5 (SCIE) Hyoun-woo Kim*, Rafael Reif, In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198.
0 4 (SCIE) Won Jong Yoo*, Jin Hwan Hahm, Hyoun Woo Kim, Chan Ouk Jung, Young Bum Koh, Moon Yong Lee, Control of Etch slope during etching of Pt in Ar/CI2/O2 plasma, Japanese Journal of Applied Physics 35, (1996.04.30) 2501-2504.
0 3 (SCIE) Z. H. Zhou*, I. Yang, H. Kim, F. Yu, Rafael Reif, Real-time in situ epitaxial film thickness monitoring and control using an emission Fourier transform infrared spectrometer, Journal of Vacuum Science & Technology A 12 (1994.07.01) 1938-1942.
0 2 (SCIE) Noboru Nakano*, Louis Marville, Syun-Ming Jang, Kenneth Liao, Curtis Tsai, Julie Tsai, Hyoun-Woo Kim, Rafael Reif, Effect of thermal annealing on the Raman spectrum of Si1−xGex grown on Si, Journal of Applied Physics 73 (1993.01.01) 414-417.
0 1 (SCIE) Syun-Ming Jang*, Hyoun-woo Kim, Rafael Reif, Thermal stability of Si/Si1−xGex/Si heterostructures deposited by very low pressure chemical vapor deposition, Applied Physics Letters 61 (1992.07.20) 315-317.