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12 |
Hyoun Woo Kim*, Jae-Hyun Han, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Study of Ru etching using O2/Cl2 helicon plasmas, Mater. Sci. Eng. B95 (2002.09.01) 249-253. |
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11 |
Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jong Wan Park, Hyun Min Jung, Jaiwook Park, Carbon nanotubes produced by tungsten-based catalyst using vapor phase deposition method, Chem. Phys. Lett. 361 (2002.08.06) 469-472. |
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10 |
Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jin Ho Lee and Kyoung Ik Cho, Synthesis of bamboo-shaped carbon¯nitrogen nanotubes using C2H2¯NH3¯Fe(CO)5 system, Chem. Phys. Lett. 359 (2002.06.13) 115-1120. |
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0 9 |
Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Chong-Yun Park, Cheol-Woong Yang, Large-scale production of aligned carbon nanotubes by the vapor phase growth method, Chem. Phys. Lett. 359 (2002.06.13) 109-114. |
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0 8 |
H.W. Kim*, Byong-Sun Ju, Byeong-Yun Nam, Won-Jong Yoo, Chang-Jin Kang, Tae-Hyuk Ahn, Joo-Tae Moon, Moon-Yong Lee, High temperature platinum etching using Ti mask layer, J.Vac. Sci. Tech. A17 (1999.7/8) 2151-2155. |
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0 7 |
Hyoun-woo Kim*, Rafael Reif, Ex-situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy, Thin Solid Films 305 (1997.08) 280-285. |
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0 6 |
Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178. |
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0 5 |
Hyoun-woo Kim*, Rafael Reif, In-situ low temperature(600oC) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198. |
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0 4 |
Won Jong Yoo*, Jin Hwan Hahm, Hyoun-woo Kim, Chan Ouk Jung, Young Bum Koh, Moon Yong Lee, Control of Etch slope during etching of Pt in Ar/CI2/O2 plasma, Jpn.J.Appl.Phys. 35, (1996.04.30) 2501-2504. |
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0 3 |
Z.H.Zhou*, I.Yang, H.Kim, F.Yu, Rafael Reif, Real time in situ epitaxial film thicknessminitoring and control using an emission Fourier transform infrared spectrometer, J.Vac.Sci.Tech.A 12 (1994.7/8) 1938-1942. |
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