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0 7 Hyoun-woo Kim*, Rafael Reif, Ex-situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy, Thin Solid Films 305 (1997.08) 280-285.
0 6 Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178.
0 5 Hyoun-woo Kim*, Rafael Reif, In-situ low temperature(600oC) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198.
0 4 Won Jong Yoo*, Jin Hwan Hahm, Hyoun-woo Kim, Chan Ouk Jung, Young Bum Koh, Moon Yong Lee, Control of Etch slope during etching of Pt in Ar/CI2/O2 plasma, Jpn.J.Appl.Phys. 35, (1996.04.30) 2501-2504.
0 3 Z.H.Zhou*, I.Yang, H.Kim, F.Yu, Rafael Reif, Real time in situ epitaxial film thicknessminitoring and control using an emission Fourier transform infrared spectrometer, J.Vac.Sci.Tech.A 12 (1994.7/8) 1938-1942.
0 2 Noboru Nakano*, Louis Marville, Syun-Ming Jang. Kenneth Liao. Cutis Tsai. Julie Tsai,Hyoun-woo Kim, Rafael Reif, Effect of thermal annealing on the Raman spectrum of SiGe grown on Si, J. Appl. Phys. 73 (1993.01.01) 414-417.
0 1 Syun-Ming Jang*, Hyoun-woo Kim, Rafael Reif. Thermal stability ofSi/SiGe/Si heterostructures deposited by very low pressure chemical vapor deposition, Appl. Phys. Lett. 61 (1992.07.20) 315-317.