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14 |
(SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Structural Characterization of ZnO Thin Film Grown on Si-Based Substrates by Metal Organic Chemical Vapor Deposition, Journal of the Korean Physical Society 42 (2003.02) S149-S152. |
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13 |
(SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, A study on the Pt electrode etching for 0.15 μm technologies, Microelectronic engineering 65 (2003.01) 185-195. |
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12 |
(SCIE) Hyoun Woo Kim*, Jae-Hyun Han, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Study of Ru etching using O2/Cl2 helicon plasmas, Materials Science and Engineering: B 95 (2002.09.01) 249-253. |
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11 |
(SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jong Wan Park, Hyun Min Jung, Jaiwook Park, Carbon nanotubes produced by tungsten-based catalyst using vapor phase deposition method, Chem. Phys. Lett. 361 (2002.08.06) 469-472. |
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10 |
(SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jin Ho Lee, Kyoung Ik Cho, Synthesis of bamboo-shaped carbon–nitrogen nanotubes using C2H2–NH3–Fe(CO)5 system, Chemical Physics Letters 359 (2002.06.13) 115-120. |
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0 9 |
(SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Chong-Yun Park, Cheol-Woong Yang, Large-scale production of aligned carbon nanotubes by the vapor phase growth method, Chemical Physics Letters 359 (2002.06.13) 109-114. |
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0 8 |
(SCIE) Hyoun-woo Kim, Byong-Sun Ju, Byeong-Yun Nam, Won-Jong Yoo, Chang-Jin Kang, Tae-Hyuk Ahn, Joo-Tae Moon, Moon-Yong Lee, High temperature platinum etching using Ti mask layer, Journal of Vacuum Science & Technology A 17 (1999.07.08) 2151-2155. |
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0 7 |
(SCIE) Hyoun-woo Kim*, Rafael Reif, Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy, Thin Solid Films 305 (1997.08) 280-285. |
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0 6 |
(SCIE) Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178. |
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0 5 |
(SCIE) Hyoun-woo Kim*, Rafael Reif, In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198. |
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