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0 6 |
(SCIE) Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178. |
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0 5 |
(SCIE) Hyoun-woo Kim*, Rafael Reif, In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198. |
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0 4 |
(SCIE) Won Jong Yoo*, Jin Hwan Hahm, Hyoun Woo Kim, Chan Ouk Jung, Young Bum Koh, Moon Yong Lee, Control of Etch slope during etching of Pt in Ar/CI2/O2 plasma, Japanese Journal of Applied Physics 35, (1996.04.30) 2501-2504. |
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0 3 |
(SCIE) Z. H. Zhou*, I. Yang, H. Kim, F. Yu, Rafael Reif, Real-time in situ epitaxial film thickness monitoring and control using an emission Fourier transform infrared spectrometer, Journal of Vacuum Science & Technology A 12 (1994.07.01) 1938-1942. |
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0 2 |
(SCIE) Noboru Nakano*, Louis Marville, Syun-Ming Jang, Kenneth Liao, Curtis Tsai, Julie Tsai, Hyoun-Woo Kim, Rafael Reif, Effect of thermal annealing on the Raman spectrum of Si1−xGex grown on Si, Journal of Applied Physics 73 (1993.01.01) 414-417. |
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0 1 |
(SCIE) Syun-Ming Jang*, Hyoun-woo Kim, Rafael Reif, Thermal stability of Si/Si1−xGex/Si heterostructures deposited by very low pressure chemical vapor deposition, Applied Physics Letters 61 (1992.07.20) 315-317. |
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