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13 (SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, A study on the Pt electrode etching for 0.15 μm technologies, Microelectronic engineering 65 (2003.01) 185-195.
12 (SCIE) Hyoun Woo Kim*, Jae-Hyun Han, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Study of Ru etching using O2/Cl2 helicon plasmas, Materials Science and Engineering: B 95 (2002.09.01) 249-253.
11 (SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jong Wan Park, Hyun Min Jung, Jaiwook Park, Carbon nanotubes produced by tungsten-based catalyst using vapor phase deposition method, Chem. Phys. Lett. 361 (2002.08.06) 469-472.
10 (SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jin Ho Lee, Kyoung Ik Cho, Synthesis of bamboo-shaped carbon–nitrogen nanotubes using C2H2–NH3–Fe(CO)5 system, Chemical Physics Letters 359 (2002.06.13) 115-120.
0 9 (SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Chong-Yun Park, Cheol-Woong Yang, Large-scale production of aligned carbon nanotubes by the vapor phase growth method, Chemical Physics Letters 359 (2002.06.13) 109-114.
0 8 (SCIE) Hyoun-woo Kim, Byong-Sun Ju, Byeong-Yun Nam, Won-Jong Yoo, Chang-Jin Kang, Tae-Hyuk Ahn, Joo-Tae Moon, Moon-Yong Lee, High temperature platinum etching using Ti mask layer, Journal of Vacuum Science & Technology A 17 (1999.07.08) 2151-2155.
0 7 (SCIE) Hyoun-woo Kim*, Rafael Reif, Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy, Thin Solid Films 305 (1997.08) 280-285.
0 6 (SCIE) Hyoun-woo Kim*, Zhen-Hong Zhou, Rafael Reif, Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 302 (1997.06.20) 169-178.
0 5 (SCIE) Hyoun-woo Kim*, Rafael Reif, In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth, Thin Solid Films 289 (1996.11.30) 192-198.
0 4 (SCIE) Won Jong Yoo*, Jin Hwan Hahm, Hyoun Woo Kim, Chan Ouk Jung, Young Bum Koh, Moon Yong Lee, Control of Etch slope during etching of Pt in Ar/CI2/O2 plasma, Japanese Journal of Applied Physics 35, (1996.04.30) 2501-2504.