|
25 |
(SCIE) Hyoun Woo Kim*, Chang-Jin Kang, Reactive ion etching of Pt electrode using O2-based plasma, Vacuum 71 (2003.07.25) 491-496. |
|
|
24 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Patterning of Ru electrode in O2/Cl2 gas using reactive ion etcher, Vacuum 71 (2003.07.25) 481-486. |
|
|
23 |
(SCIE) H. W. Kim*, W. S. Hwang, C. Lee, R. Reif, Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma, Journal of Materials Science Letters 22 (2003.07) 939-940. |
|
|
22 |
(SCIE) Kwang Sik Kim, Hyoun Woo Kim*, Nam Ho kim, Structural characterization of ZnO films grown on SiO2 by the RF magnetron sputtering, Physica B: Condensed Matter 334 (2003.07) 343-346. |
|
|
21 |
(SCIE) Hyoun Woo Kim*, Chang-Jin Kang, Effect of Ti-Mask Addition and Temperature Elevation on O2/Cl2 Plasma Etching of Pt, Journal of the Korean Physical Society 42 (2003.05) 667-670. |
|
|
20 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Investigation into the patterning of a concave-type Pt electrode capacitor using the reactive ion etching method, Microelectronic Engineering 65 (2003.05) 489-497. |
|
|
19 |
(SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Synthesis of ZnO nanorod on bare Si substrate using metal organic chemical vapor deposition, Physica B: Condensed Matter 328 (2003.05) 368-371. |
|
|
18 |
(SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Chong Mu Lee, Effect of growth temperature on ZnO thin film deposited on SiO2 substrate, Materials Science and Engineering: B 98 (2003.03.15) 135-139. |
|
|
17 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma, Microelectronic Engineering 65 (2003.03) 319-326. |
|
|
16 |
(SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas, Microelectronic Engineering 65 (2003.03) 285-292. |
|
