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165 (SCIE) H. S. Kim, H. W. Kim*, Fabrication and Raman Studies of MgO/SnO2 Core-Shell Heteronanowires, Acta Physica Polonica A 116 (2009.07) 58-61.
164 (SCIE) Hyoun Woo Kim*, Jong Woo Lee, Mesfin Abayneh Kebede, Hyo Sung Kim, Chongmu Lee, Effects of Thermal Annealing on Pt-Shell/MgO-Core Nanowires, Journal of Nanoscience and Nanotechnology 9 (2009.07) 4417-4424.
163 (SCIE) Hyoun Woo Kim*, Jong Woo Lee, Mesfin Abayneh Kebede, Hyo Sung Kim, Chongmu Lee, Annealing effects of Ga2O3–ZnO core-shell heteronanowires, Materials Science and Engineering B 163 (2009.06.25) 44-47.
162 (SCIE) Hyoun Woo Kim*, Hyo Sung Kim, Mesfin Abayneh Kebede, Han Gil Na, Ju Chan Yang, Chongmu Lee, Structural and photoluminescence properties of GaN/ZnO core-shell nanowires with their shells sputtered, Crystal Research and Technology 44 (2009.06) 636-640.
161 (SCIE) Hyoun Woo Kim*, Mesfin Abayneh Kebede, Hyo Sung Kim, Temperature-controlled growth and photoluminescence of AlN nanowires, Applied Surface Science 255 (2009.03.30) 7221-7225.
160 (SCIE) Chanseok Hong, Hohyeong Kim, Hyoun Woo Kim, Namhee Cho, Ilhang Lee, Ikmo Lee, Chongmu Lee*, Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films, Journal of the Ceramic Society of Japan 117 (2009.05) 566-569.
159 (SCIE) Hyoun Woo Kim*, Mesfin Abayneh Kebede, Hyo Sung Kim, Chongmu Lee, GaN nanowires sputtered with Ag shell layers, Thin Solid Films 517 (2009.05.29) 3908-3911.
158 (SCIE) Hyoun Woo Kim*, Jong Woo Lee, Chongmu Lee, Mesfin A. Kebede, Thermal annealing behavior of silica-coated coaxial nanowires, Polymers for advanced technologies 20 (2009.03) 246-250.
157 (SCIE) Hyoun Woo Kim*, Jong Woo Lee, Chongmu Lee, Growth of tin oxide rod-like and sheet-like structures, Journal of Materials Science: Materials in Electronics 20 (2009.02.19) 99-104.
156 (SCIE) Sunghoon Park, Jina Jun, Hyoun Woo Kim, Chongmu Lee*, Preparation of one dimensional Bi2O3-core/ZnO-shell structures by thermal evaporation and atomic layer deposition, Solid State Communications 149 (2009.02) 315-318.