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12 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Patterning of Ru electrode in O2/Cl2 gas using reactive ion etcher, Vacuum 71 (2003.07.25) 481-486. |
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11 |
(SCIE) H. W. Kim*, W. S. Hwang, C. Lee, R. Reif, Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma, Journal of Materials Science Letters 22 (2003.07) 939-940. |
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10 |
(SCIE) Kwang Sik Kim, Hyoun Woo Kim*, Nam Ho kim, Structural characterization of ZnO films grown on SiO2 by the RF magnetron sputtering, Physica B: Condensed Matter 334 (2003.07) 343-346. |
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0 9 |
(SCIE) Hyoun Woo Kim*, Chang-Jin Kang, Effect of Ti-Mask Addition and Temperature Elevation on O2/Cl2 Plasma Etching of Pt, Journal of the Korean Physical Society 42 (2003.05) 667-670. |
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0 8 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Investigation into the patterning of a concave-type Pt electrode capacitor using the reactive ion etching method, Microelectronic Engineering 65 (2003.05) 489-497. |
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0 7 |
(SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Synthesis of ZnO nanorod on bare Si substrate using metal organic chemical vapor deposition, Physica B: Condensed Matter 328 (2003.05) 368-371. |
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0 6 |
(SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Chong Mu Lee, Effect of growth temperature on ZnO thin film deposited on SiO2 substrate, Materials Science and Engineering: B 98 (2003.03.15) 135-139. |
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0 5 |
(SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma, Microelectronic Engineering 65 (2003.03) 319-326. |
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0 4 |
(SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas, Microelectronic Engineering 65 (2003.03) 285-292. |
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0 3 |
(SCIE) J. H. Lee, W. J. Choi*, Y. J. Park, I. K. Han, J. I. Lee, J. W. Cho, E. K. Kim, C. M. Lee, H.-W. Kim, Thermal Treatment of InGaAs/GaAs Self-assembled Quantum Dots With SiNx and SiO2 Capping Layers, Journal of the Korean Physical Society 42 (2003.02) S313-S315. |
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